technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com npn power silicon transistor qualified per mil-prf-19500/394 t4-lds-0014 rev. 4 (082192) page 1 of 2 devices levels 2n4150 2n5237 2n5238 jan 2n4150s 2n5237s 2n5238s jantx jantxv jans absolute maximum ratings (t c = +25c unless otherwise noted) parameters / test conditions symbol 2n4150 2n4150s 2n5237 2n5237s 2n5238 2n5238s unit collector-emitter voltage v ceo 70 120 170 vdc collector-base voltage v cbo 100 150 200 vdc emitter-base voltage v ebo 10 vdc collector current i c 10 adc total power dissipation @ t a = +25c (1) @ t c = +25c (2) p t 1.0 15 w operating & storage junction temperature range t j , t stg -65 to +200 c thermal resistance, junction-to case junction- to ambient r jc r ja 10 175 c/w 1) derate linearly @ 5.7mw/c for t a > +25c 2) derate linearly @ 100mw/c for t c > +25c electrical characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit off characteristics collector-emitter breakdown voltage i c = 0.1madc 2n4150, 2n4150s 2n5237, 2n5237s 2n5238, 2n5238s v (br)ceo 70 120 170 vdc collector-emitter cutoff current v be = 0.5vdc, v ce = 60vdc v be = 0.5vdc, v ce = 110vdc v be = 0.5vdc, v ce = 160vdc 2n4150, 2n4150s 2n5237, 2n5237s 2n5238, 2n5238s i cex 10 10 10 adc collector-emitter cutoff current v ce = 60vdc v ce = 110vdc v ce = 160vdc 2n4150, 2n4150s 2n5237, 2n5237s 2n5238, 2n5238s i ceo 10 10 10 adc emitter-base cutoff current v eb = 7.0vdc v eb = 5.0vdc i ebo 10 0.1 adc to-5 2n4150, 2n5237, 2n5238 to-39 (to-205ad) 2n4150s, 2n5237s, 2n5238s
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com npn power silicon transistor qualified per mil-prf-19500/394 t4-lds-0014 rev. 4 (082192) page 2 of 2 electrical characteristics (t a = +25c, unless otherwise noted) (cont.) parameters / test conditions symbol min. max. unit collector-base cutoff current v cb = 100vdc v cb = 150vdc v cb = 200vdc v cb = 80vdc 2n4150, 2n4150s 2n5237, 2n5237s 2n5238, 2n5238s all types i cbo 10 10 10 0.1 adc on characteristics (3) forward-current transfer ratio i c = 1.0adc, v ce = 5.0vdc i c = 5.0adc, v ce = 5.0vdc i c = 10adc, v ce = 5.0vdc 2n4150, 2n4150s 2n5237, 2n5237s 2n5238, 2n5238s all types all types h fe 50 50 50 40 10 200 225 225 120 - collector-emitter saturation voltage i c = 5.0adc, i b = 0.5adc i c = 10adc, i b = 1.0adc v ce(sat) 0.6 2.5 vdc base-emitter saturation voltage i c = 5.0adc, i b = 0.5adc i c = 10adc, i b = 1.0adc v be(sat) 1.5 25 vdc dynamic characteristics parameters / test conditions symbol min. max. unit magnitude of common emitter small-signal short-circuit forward current transfer ratio i c = 0.2adc, v ce = 10vdc, f = 10mhz |h fe | 1.5 7.5 forward current transfer ratio i c = 50madc, v ce = 5.0v, f = 1.0khz 2n4150, 2n4150s 2n5237, 2n5237s 2n5238, 2n5238s h fe 40 40 40 160 160 250 output capacitance v cb = 10vdc, i e = 0, 100khz f 1.0mhz c obo 350 pf switching characteristics parameters / test conditions symbol min. max. unit delay time t d 50 ns rise time v cc = 20vdc, v bb = 5.0vdc i c = 5.0adc, i b1 = 0.5adc t r 500 ns storage time t s 1.5 s fall time v cc = 20vdc, v bb = 5.0vdc i c = 5.0adc, i b1 = -i b2 = -0.5adc t f 500 ns safe operating area dc tests t c = +25c, 1 cycle, t = 1.0s test 1 v ce = 40vdc, i c = 0.22adc test 2 v ce = 70vdc, i c = 90madc test 3 v ce = 120vdc, i c = 15madc v ce = 170vdc, i c = 3.5madc 2n5237, 2n5237s 2n5238, 2n5238s (3) pulse test: pulse width = 300s, duty cycle 2.0%
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